Qorvo 's silicon carbide (SiC) JFETs work are high - performance, normally - on JFETs transistors, from 650 to 1700 V, with ultra - low on - hold (RDS (on)) as low as 25 mohms. The Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications.
Loading the Product Tables