SiC diodes

Qorvo 's silicon carbide (SiC) diodes are high - performance Merged - PiN - Schottky diodes (MPS) with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175 ° C, maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.