使用GaN技术启用5G：设置表格成功

最终，当我们达到新兴MMW标准时，GaN将在今天的技术方面具有明显的优势。GaN提供更高的功率密度，带来了多种优点：

• Size reduction
• 降低电流消耗
• 更高的系统效率

我们已经看到了GaN的好处4G基站arena, where GaN has begun displacing silicon LDMOS. For 5G, GaN's ability to work in the high-frequency range allows it to evolve from base stations to small cell applications and, ultimately, into mobile devices.

Going Beyond Infrastructure: Moving GaN into Mobile Handsets

第一个GAN应用程序是为high-power military使用如雷达或者counter-IED jammers，最终进入商业基站和有线电视repeaters. Typical operating voltages for these applications range between 28 and 48 volts.

然而，在手持设备中，平均电压范围为2.7至5伏。要在这些低电压电平进行GaN，我们将需要在不同类别的设备上工作。我们已经开始以替代材料查看GaN设备，以便在低电压下工作。

甘Developments for 5G at Qorvo

As shown in the figure below, Qorvo currently has a broad range of production-released GaN foundry processes used to enable products for 5G applications:

• Higher voltages, lower frequencies:As we move lower in frequency, we bring into play our 0.25 µm high voltage technology, or QGaN25HV. This QGaN25HV allows us to move to 48 volts with a 0.25 µm device, with high gain and power efficiency. QGaN25HV is well suited for 5G base stations as they move toward 6 GHz. At the lower 4G frequencies, between L- and S-band, our highest power density 0.5 µm technology works up to 10 watts per millimeter.
• 高频应用：Our current GaN process portfolio includes 0.15 µm, or 150 nanometer, technology for higher frequencies. Our 0.25 µm technology is well suited for applications ranging from X- through Ku-band. This 0.25 µm technology also offers highly efficient power amplifier functions.

But what about GaN processes for mobile 5G handsets? As we see the higher frequency standards emerge (Ka-band or mmW), low-voltage GaN processes will require further development.

Addressing Packaging and Thermal Challenges of GaN and 5G

One last piece of the puzzle to enable GaN for 5G involves advanced packaging techniques and thermal management. GaN devices for highly reliable military applications have traditionally been available in ceramic or metallic packages; however, commercial 5G network infrastructure and mobile handsets will require smaller, lower-cost, plastic overmold packaging to compete with incumbent silicon LDMOS or GaAs devices in plastic packages. Similarly, mobile handsets will focus on low-cost modules that include GaN mixed with other technologies, analogous to today's products — but they'll also need highly compact, highly efficient mmW materials and devices.

The challenge for infrastructure will be developing packages that maintain RF performance while addressing thermal management. GaN's higher power densities — from 3 to 5 and as much as 10 times higher than GaAs — present a very tough thermal and mechanical problem to the subsystem package designer.

我们的工程师总是平衡三种要求：RF性能，热管理和低成本。Qorvo拥有塑料超模包，具有增强的GaN的热管理功能，包括内置于包装的基座中的热展示。

Our products in plastic packages also meet stringent environmental standards, such as JEDEC standards for temperature, humidity and bias compliance. This gives our customers assurance that our products will have long-term reliability for their 5G applications — whether high frequency, high power or low voltage.

期待未来

Although 5G is still several years away, Qorvo is already working to develop the process technology and packaging techniques to enable our customers' 5G applications. GaN is sure to play a key, exciting role in the 5G landscape.