Hillsboro, Oregon (USA) - July 15, 2014-Triquint Semiconductor，Inc。是一家领先的RF解决方案供应商和技术创新者，宣布已达到国防生产里程碑，成功完成防御生产法案III碳化硅生产能力计划氮化镓。
"The mission of the DPA Title III program is to create assured, affordable and commercially-viable production capabilities and capacities for items essential for national defense, [which] strengthen the economic and technological competitiveness of the U.S. defense industrial base," said Dr. Gene Himes, U.S. Air Force Research Laboratory Program Manager. "This critical mission strengthens the economic and technological competitiveness of the U.S. industrial base, and TriQuint's GaN technology has achieved that goal."
在2014年5月8日，在华盛顿特区举行的最终计划管理审查，在华盛顿特区举行的最终计划管理审查中，在“碳化硅雷达/电子战中达到氮化硅氮化镓/电子战中达到氮化硅氮化镓/电子战中达到的国防综合捐款”的杰出贡献。。引文由弗兰克肯德尔议员签署，副辩护，辩护，用于收购，技术和物流。
"We're honored to be recognized by Mr. Kendall and affirm our commitment to support the DoD community," said Vice President and General Manager James Klein, Infrastructure and Defense Products. "TriQuint has proved its manufacturing readiness and GaN maturity, with yields rivaling established GaAs production, not only for defense production programs but also for our commercial customers."
Triquint发货了超过119,000 0.25 UM GaN功率放大器设备，以支持越雷达生产计划。在分阶段阵列现场测试期间，大约15,000个设备积累了超过367万台设备，没有报告的设备故障。基于三温加速寿命测试的行业领先可靠性，TriQuint已看到平均失效超过107hours and a superior T1 (the time at which 1 percent of failures occur) of more than 106每小时在200摄氏度，没有预处理，在这一领域有一个值得注意的成就。
As part of the Title III contract, awarded in 2010, TriQuint progressed through three program phases to prove manufacturing readiness at its Richardson, Texas facility. The first phase assessed TriQuint's initial manufacturing readiness. In the second phase, TriQuint worked to refine and improve the production processes, with the goal of reaching the manufacturing readiness needed for Low Rate Initial Production (LRIP) of GaN monolithic microwave integrated circuits (MMICs). In the final phase, TriQuint applied the lessons learned throughout the program, showing that its manufacturing processes are ready to meet full performance, cost and capacity goals, with the capability in place to support full rate production. TriQuint's Texas facility is an accredited DoD Trusted Source for foundry; post-process; assembly and packaging; and RF test services.
TriQuint leads GaN research and product development for both defense and civilian applications. Under the guidance of the U.S. Air Force Research Laboratory's Materials and Manufacturing Directorate, rigorous manufacturing readiness assessment criteria were used to benchmark TriQuint's high frequency, high power GaN production capability. TriQuint's ongoing development of GaN-based devices is leading to smaller, more efficient power amplifiers, typically used for Department of Defense radar and electronic warfare programs as well as commercial wireless communications and infrastructure.
关于Triquint的事实
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world's top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry's broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visitwww.triquint.com..
Triquint：达到进一步，达到更快TM值
Media Contact:Brandi Frye.
营销通讯高级总监
Triquint Semiconductor，Inc
电话：+1.503.615.9488
电子邮件：brandi.frye@triquint.com.