QPA2213D
2 - 20 GHz, 2 Watt GaN Amplifier
关键Features
- Frequency Range: 2 - 20 GHz
- P坐(PIN=18 dBm）：34 dBm
- PAE (PIN=18 dBm): 23 %
- Power Gain (PIN=18 dBm）：16 dB
- 小信号增益：25dB
- Noise Figure: 4.0 dB
- Bias: VD=18伏，IDQ=330毫安，PIN=18 dBm
- Package Dimensions: 2.75 x 2.75 x 0.10 mm
笔记：
120密耳铜钼载板背面的热阻测定，共晶模具连接（85 C）
2. Refer to the following documentGaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
| Mouser | 10 | Buy Online > | |
| 射频微波 | 10 | Buy Online > |
库尔沃’s QPA2213D is a wide band driver amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213D provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added efficiency.
QPA2213D MMIC尺寸为2.75 x 2.75 x 0.10 mm。它可以支持各种操作条件，以最佳支持系统要求。具有良好的热性能，它可以支持一系列的偏置电压。
The QPA2213D has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213D is ideal for both commercial and military wide band or narrow band systems.
无铅，符合RoHS标准。
Typical Applications
- 军用雷达
- Civilian Radar
| 频率最小(GHz) | 2 |
| Frequency Max(GHz) | 20 |
| Pout(dBm) | 34 |
| 增益（分贝） | 16 |
| PAE(%) | 23 |
| 电压(V) | 18 |
| 当前(mA) | 330 |
| RoHS | 是的 |
| 无铅 | 是的 |
| Halogen Free | 是的 |
| ITAR Restricted | No |