QPD1015

    DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

    关键Features

    • Frequency range: DC - 3.7GHz
    • Output power (P3dB): 70 W at 2 GHz
    • 线性增益:2 GHz典型20 dB
    • Typical PAE3dB: 74 % at 2 GHz
    • 工作电压:50V
    • 低温封装

    Qorvo.'s QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.

    Lead-free and ROHS compliant

    可根据要求提供评估板。

    Typical Applications

      • Avionics
      • Civilian Radar
      • 干扰
      • 军事雷达
      • 窄带放大器
      • 专业和军用收音机
      • Test Instrumentation
      • Wideband Amplifiers
    频率最小(MHz) DC
    Frequency Max(MHz) 3,700
    获得(D b) 20.
    Psat(dBm) 48.5
    PAE(%) 74.
    vd.(V) 50.
    凡好(mA) 65.
    Package Type NI-360
    RoHS
    无铅
    Halogen Free
    ITAR Restricted No

    Modelithics®QorvoGan库

    本产品提供了模型的非线性模型。

    Qorvo.and暗示学者已合作为Qorvo GaN晶体管器件提供具有高精度非线性仿真模型的设计人员。该模型库与最新的电子设计自动化(EDA)仿真工具无缝集成,并为每个型号提供型号信息数据表进行彻底记录。学到更多.

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    Modowsithics®QorvoGan Library手册

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