QPD2793
2.62 - 2.69 GHz，200瓦，48 V GaN RF功率晶体管
关键Features
- Frequency range: 2.62-2.69 GHz, Band 7
- 排水电压：48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 75%
- NI-400.ceramic package
Qorvo.'s QPD2793 is a discrete GaN on SiC HEMT which operates from 2.62-2.69 GHz. The device is a single stage matched power amplifier transistor.
The QPD2793 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2793可以在48 V操作中提供200 W的PSAT。
无铅和符合RoHS。
Typical Applications
- Active Antennas
- 乐队7.
- Macro Cell Base Station
- 无线通信
| 频率最小（MHz） | 2,620 |
| Frequency Max（MHz） | 2,690 |
| 获得（D b） | 23. |
| Psat(dBm) | 53. |
| PAE（％） | 75. |
| vd.(V) | 48. |
| 凡好(mA) | 360 |
| Package Type | NI-400. |
| RoHS | 是 |
| 无铅 | 是 |
| Halogen Free | 是 |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: