T1G4020036-FS.
DC.- 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
主要特征
- Frequency: DC - 3.5 GHz
- 输出功率（P3.dB）1：200W
- 线性增益1: 18.1 db
- Typical PAE3.dB1：67.6％
- 工作电压：50 V
- CW和脉冲能力
没有te: 1: @2.8 GHz Load Pull (Half of device)
Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
无铅和符合RoHS
Evaluation boards are available upon request.
典型应用
- 平民雷达
- Jammers
- Military Radar
- Professional and Military Radio
- 测试仪表
- Wideband and Narrowband Amplifiers
| 频率最小(MHz) | DC. |
| 频率最大(MHz) | 3,500. |
| Gain(dB) | 18.1 |
| Psat.（DBM） | 2x 53.0 |
| Drain Efficiency(%) | 67.6 |
| Vd（v） | 50 |
| Idq（嘛） | 520. |
| 包装类型 | NI-650 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 没有 |
| ECCN. | 3.A001.B.3.A.3 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。