TGF2023-2-05
DC.- 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
主要特征
- Frequency range: DC to 18 GHz
- 4.3.dBm nominal Psat at 3 GHz
- 78.3％的最大PAE
- 18.dB nominal power gain
- 偏见：V.D.= 12 to 32 V, IDQ.= 100-500 mA
- Chip dimensions: 0.82 x 1.44 x 0.10 mm
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.
TGF2023-2-05通常提供43dBm的饱和输出功率，功率增益为18dB，3GHz。最大功率增加的功率为78.3％，这使得TGF2023-2-05适用于高效应用。
该产品是无铅，符合RoHS。
典型应用
- 宽带无线
- Military
- 空间
| 频率最小(MHz) | DC. |
| 频率最大(MHz) | 18.,000 |
| Gain(dB) | 18. |
| Psat.（DBM） | 4.3. |
| PAE.(%) | 78.3. |
| Vd（v） | 12to 32 |
| Idq（嘛） | 100到500. |
| 包装类型 | 死 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 没有 |
| ECCN. | 3.A001.B.3.B.4 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。