TQP0102
DC - 4 GHz, 5 Watt GaN Power Transistor
关键Features
- Frequency: DC to 4 GHz
- Output Power (P3dB): 37 dBm
- Linear Gain: > 19 dB
- Operating Voltage: 32 V
- Drain Efficiency: 68% at P3dB
- Package Dimensions: 3 x 3 mm QFN
Qorvo's TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor.
The TQP0102 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna systems. The TQP0102 can also be used as a driver in a macrocell base station power amplifier.
The wide bandwidth of the TQP0102 makes it suitable for many different applications from DC to 4 GHz. The TQP0102 can deliver PSAT of 5 Watts at 28 to 32 V operation.
Typical Applications
- Cellular Infrastructure
- General Purpose RF Power
- Radar
- Jammers
- Test Instrumentation
- Wideband Communications
- Narrowband Communications
Product Categories
| 频率最小(MHz) | DC |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | > 19 |
| Psat(dBm) | 37 |
| PAE(%) | 64 |
| Vd(V) | 32 |
| Idq(mA) | 25 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: