TGF2023-2-20
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT
Key Features
- Frequency range: DC to 14 GHz
- 50.5 dBm nominal Psat at 3 GHz
- 70.5％的最大PAE
- 19..2 dB nominal power gain
- Bias: VD= 12到32 v，我DQ= 400 - 2000 mA
- 芯片尺寸：0.82 x 4.56 x 0.10 mm
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Qorvo.'s TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz.
TGF2023-2-20通常提供50.5dBm的饱和输出功率，功率增益为19.2 dB，3 GHz。最大功率增加效率为70.5％，这使得TGF2023-2-20适用于高效应用。
The product is lead-free and RoHS compliant.
Typical Applications
- Broadband Wireless
- 军队
- Space
| Frequency Min（MHz） | DC |
| Frequency Max（MHz） | 14,000 |
| 获得（D b） | 19..2 |
| Psat(dBm) | 50.5 |
| PAE（％） | 70.5 |
| vd.(V) | 12到32 |
| 凡好(mA) | 400 to 2,000 |
| Package Type | Die |
| RoHS | 是的 |
| 无铅 | 是的 |
| Halogen Free | 是的 |
| ITAR Restricted | No |
| ECCN | 3a001.b.3.b.4 |
This product appears in the following application block diagrams: