The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.
无铅和符合RoHS。
| 频率最小(MHz) | 2,500 |
| 频率最大(MHz) | 2,700. |
| Gain(dB) | 15. |
| Psat.(DBM) | 50.5 |
| Drain Efficiency(%) | 55 |
| Vd(v) | 4.8 |
| Idq(嘛) | 65 |
| 包装类型 | DFN. |
| Package(毫米) | 7.0 x 6.5 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 不 |
| ECCN. | EAR99 |