The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.
无铅和符合RoHS。
频率最小(MHz) | 2,500 |
频率最大(MHz) | 2,700. |
Gain(dB) | 15. |
Psat.(DBM) | 50.5 |
Drain Efficiency(%) | 55 |
Vd(v) | 4.8 |
Idq(嘛) | 65 |
包装类型 | DFN. |
Package(毫米) | 7.0 x 6.5 |
rohs. | Yes |
Lead Free | Yes |
卤素免费 | Yes |
ITAR受到限制 | 不 |
ECCN. | EAR99 |