QPD0210

    1.8 - 2.7 GHz, 2 x 15 Watt, 48 Volt Dual GaN RF Transistor

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    Key Features

    • Operating Frequency Range: 1800 - 2700 MHz
    • 运行漏极电压:+48 V
    • Output Power (P星期六): 16.6 W
    • 排水效率: 71.9%
    • Linear Gain: 18.8 dB

    The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor.

    QPD0210 can deliver PSAT of 16.6 W at +48 V operation through each path.

    符合rohs。

    Typical Applications

      • W-CDMA / LTE
      • 宏小区基站驱动程序
      • Microcell基站
      • Small Cell
      • Active Antenna
      • 5GMassive MIMO
    频率最小(MHz) 1,800
    Frequency Max(MHz) 2,700
    获得(D b) 18.8
    Psat(dBm) 42.2
    排水效率(%) 71.9
    vd.(V) 48.
    凡好(mA) 35.
    包Type DFN
    (mm) 7.0 x 6.5
    RoHS
    无铅
    Halogen Free
    ITAR Restricted No
    ECCN EAR99