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The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor.
QPD0210 can deliver PSAT of 16.6 W at +48 V operation through each path.
符合rohs。
频率最小(MHz) | 1,800 |
Frequency Max(MHz) | 2,700 |
获得(D b) | 18.8 |
Psat(dBm) | 42.2 |
排水效率(%) | 71.9 |
vd.(V) | 48. |
凡好(mA) | 35. |
包Type | DFN |
包(mm) | 7.0 x 6.5 |
RoHS | 是 |
无铅 | 是 |
Halogen Free | 是 |
ITAR Restricted | No |
ECCN | EAR99 |