QPD2194
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
关键Features
- 频率范围：1.8-2.2GHz
- 工作漏极电压：+48 V
- Maximum Output Power (PSAT): 371 W
- Maximum Drain Efficiency: 78.8%
- Efficiency-Tuned P3dB Gain: 18.0 dB
- 2-lead, earless, ceramic flange NI400 package
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2194 can deliver PSAT of 371 W at +48 V operation.
无铅，符合ROHS标准。
For additional information on GaN thermal performance refer to the followingapplication noteand视频.
Typical Applications
- W-CDMA / LTE
- 宏蜂窝基站
- Active Antenna
| 频率最小（兆赫） | 1,800 |
| Frequency Max（兆赫） | 2,200 |
| 增益（分贝） | 21 |
| Psat(dBm) | 55.7 |
| 排水效率(%) | 78.8 |
| 虚拟磁盘(V) | 48 |
| 静电流(mA) | 600 |
| Package Type | NI400 |
| RoHS | 是的 |
| 无铅 | 是的 |
| Halogen Free | No |
| ITAR Restricted | No |
| ECCN | 耳99 |