End of Life announced January 20, 2020 (PCN 20-0008)。
Last Time Buy: August 1, 2020
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Qorvo的T1G4004532-FS是45 W(P3DB)宽带输入预匹配的离散GaN上的SiC HEMT,其由DC到3.5 GHz和32V电源轨。该器件位于一个行业标准空气腔包中,理想地适用于军事和民用雷达,陆地移动和军用无线电通信,航空电子学和测试仪表。该装置可以支持脉冲和线性操作。
无铅和符合RoHS
Evaluation boards are available upon request.
频率最小(MHz) | DC. |
频率最大(MHz) | 3,500. |
Gain(dB) | > 19. |
Psat.(DBM) | 4.6.5 |
Drain Efficiency(%) | 52 |
Vd(v) | 3.2 |
Idq(嘛) | 220. |
包装类型 | NI-360 |
rohs. | Yes |
Lead Free | Yes |
卤素免费 | Yes |
ITAR受到限制 | 不 |
ECCN. | EAR99 |
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。