T1G4012036-FS.
DC.- 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor
主要特征
- Frequency: DC to 3.5 GHz
- 输出功率（P3DB）：3.3 GHz的120W
- 线性增益：16 dB为3.3 GHz
- 工作电压：36 - 50 V.
- Low thermal resistance package
Qorvo的T1G4012036-FS是120 W（P3DB）宽带输入预匹配的离散GaN上的SiC HEMT，其由DC到3.5 GHz和36-50V电源轨道。该器件位于一个行业标准空气腔包中，理想地适用于军事和民用雷达，陆地移动和军用无线电通信，航空电子学和测试仪表。该装置可以支持脉冲和线性操作。
无铅和符合RoHS
Evaluation boards are available upon request.
典型应用
- 平民雷达
- Jammers
- Military Radar
- Professional and Military Radio
- 测试仪表
- Wideband and Narrowband Amplifiers
| 频率最小(MHz) | DC. |
| 频率最大(MHz) | 3,500 |
| Gain(dB) | 16 |
| Psat.（DBM） | 50.8 |
| Drain Efficiency(%) | 52 |
| Vd（v） | 36到50 |
| Idq（嘛） | 3.60 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 没有 |
| ECCN. | 3.A001.B.3.A.3 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。