TGF2819-FL.
DC - 4.0 GHz，200瓦峰，40瓦AVG。电源，50伏，GaN RF功率晶体管
主要特征
- Frequency range: DC - 4 GHz
- 输出功率（P3.dB）1: 257 W
- 线性增益1：18 dB.
- Typical PAE3.dB1：> 67.5％
- Operating voltage: 50V
- CW和脉冲能力
注1：@ 3 GHz负荷拉动
The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
无铅和符合RoHS
Evaluation boards are available upon request.
典型应用
- Military Radar
- 平民雷达
- 专业和军用无线电通信
- 测试仪表
- 宽带或窄带放大器
- Jammers
| 频率最小(MHz) | DC. |
| 频率最大(MHz) | 4.,000 |
| Gain(dB) | > 14. |
| Psat.（DBM） | 51 |
| Vd（v） | 50 |
| Idq（嘛） | 250 |
| 包装类型 | NI-360 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 没有 |
| ECCN. | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。
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