The Qorvo GaN Advantage
GaN Advances RF Technology
氮化镓（GaN）技术继续发展，以不断增加的功率密度，可靠性和降低的尺寸来推动可能的限制。不再是用于防御/航空航天应用的技术，GaN在更复杂的应用程序中实现更高且较高的频率，例如相控阵，radar,base transceiver stations for 5G,cable TV (CATV),VSAT and defense communications.
Qorvo拥有20多年的研究和创新领导，QorvoGaN-on-SiC RF technology继续为客户要求带来最高的性能和可靠性。并通过我们正在进行的铸造伙伴关系金博宝安卓版DARPA WBGS II和IIIand other research labs, we help enable where GaN can go in the future.
New GaN Products
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Proven Technology
With more than 30 years of expertise in GaAs and GaN, Qorvo has completed more than 1,000 MMIC designs. From space technology to defense to wireless and CATV, our designs range from near-DC through W-band.
Qorvo.provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.
We're so confident in our GaN expertise that we recommend这十个问题，以确保您为您选择合适的GAN供应商. Qorvo's GaN products and technology enable the systems all around you that keep you connected and protected.
GaN提供无与伦比的表现
- High power density
- Reduced size and part counts
- Excellent gain and efficiency
- Robust operation and long pulse capability
- High operating voltage for improved system power efficiency
Benefits of Qorvo GaN Technology
- Record-setting reliability exceeding previous industry standards
- Unique ability to integrate / package / test in secure, U.S. facilities
- 屡获殊荣的创新，包括第一个Gan-On-indond设备
- First to market 0.15 µm and 0.25 µm GaN technology
- U.S. Department of Defense (DoD) accreditedCategory 1A "Microelectronics Trusted Source,"their highest designation, certifying that Qorvo products, processes and procedures meet stringent control and secure handling standards
GaN-on-SiC Advantage
Qorvo的GaN亮点
Heritage
Leader in defense and commercial GaN research since 1999
GaN Products
Wide selection of innovative GaN amplifiers, transistors and switches
University Partners
米assachusetts Institute of Technology, University of Notre Dame, University of Colorado at Boulder, University of Texas at Dallas, Ohio State University and University of Bristol
研究
性能和可靠性GaN开发的领导者
最近的荣誉
- 2015 Tech Titans Corporate Innovation Award
- 2013 CS Industry Award for DARPA NJTT program
- 2012年CS产业奖，DARPA MPC计划
- 2011年CS行业为DARPA下一个方案奖
The Global GaN Impact
Strategy Analytics recognizes Qorvo's GaN R&D / GaN product innovation
Active R&D Programs
- DARPA NEXT program for highly complex, high-frequency GaN MMICs
- DARPA ICECool program with partner Lockheed Martin, measuring thermal management of GaN on SiC
- DARPA Microscale Power Conversion program to develop ultra-fast power switch technology and integrate technology into next-generation amplifiers
- DARPA Near Junction Thermal Transport (NJTT) GaN program to increase circuit power handling capabilities through enhanced thermal management
- 国防生产法（DPA）标题III镓氮化物雷达/电子战单片微波集成电路
GaN Technology
- QGaN25: Generation II 0.25-micron GaN on silicon carbide (SiC); 100mm wafers; DC-18 GHz applications with drain bias up to 40 V
- QGaN25HV: High-voltage 0.25-micron GaN on SiC; 100mm wafers, DC-10 GHz applications with drain bias up to 48 V
- Qgan15：0.15微米甘SiC;100毫米薄片;DC-40 GHz应用，带有漏极偏置，高达28 V
- QGAN50：0.50微米甘SiC;100毫米薄片;DC-10GHz应用漏极偏置高达65 V
Awards and Accreditations
