QPD1020

    30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor

    Key Features

    • Frequency Range: 2.7 - 3.5 GHz
    • 输出功率(P3DB):31 W AT 3.1 GHz
    • Linear Gain: 18.4 dB typical at 3.1 GHz
    • Typical PAE3dB: 64% at 3.1 GHz
    • Operating Voltage: 50V
    • Low Thermal Resistance Package
    • CW and Pulse Capable
    • 6 x 5 mm封装

    The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

    无铅和符合RoHS。

    可根据要求提供评估板。

    For additional information on GaN thermal performance refer to the followingapplication noteand视频.

    Typical Applications

      • 军事雷达
      • Civilian Radar
      • Test Instrumentation
    频率最小(MHz) 2,700
    Frequency Max(MHz) 3,500
    获得(D b) 18.4
    Psat(dBm) 45.
    PAE(%) 64.
    vd.(V) 50.
    凡好(mA) 52.5
    包Type DFN
    (mm) 6 x 5
    RoHS
    无铅
    Halogen Free
    ITAR Restricted No
    ECCN EAR99

    Modelithics®QorvoGan库

    本产品提供了模型的非线性模型。

    Qorvo.and暗示学者已合作为Qorvo GaN晶体管器件提供具有高精度非线性仿真模型的设计人员。该模型库与最新的电子设计自动化(EDA)仿真工具无缝集成,并为每个型号提供型号信息数据表进行彻底记录。学到更多.

    请求免费的博物思科模型

    Modowsithics®QorvoGan Library手册

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW信号干扰器

    • 应用>防御和航空航天>雷达> S带雷达

      S带雷达