T1G6001032-SM
DC - 6 GHz，10瓦，32 V GaN RF功率晶体管
2017年11月3日宣布的生活结束（PCN17-0186.）。
Last Time Buy May 7, 2018.
请用QPD1022for new designs.
联系您当地的销售代表for assistance.
主要特征
- 频率：DC至6 GHz
- 输出功率（P3DB）：3.1 GHz的峰值
- Linear gain: 19 dB at 3.1 GHz
- Operating voltage: 32 V
- 低温封装
Qorvo's T1G6001032-SM is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC - 6GHz and a 32V supply rail. The device is in an air cavity QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
无铅和符合RoHS
Evaluation boards are available upon request.
典型应用
- 平民雷达
- Jammers
- Military Radar
- Professional and Military Radio
- 测试仪表
- Wideband and Narrowband Amplifiers
| 频率最小(MHz) | DC. |
| 频率最大(MHz) | 6000 |
| Gain(dB) | 19. |
| Psat.（DBM） | 4.0. |
| Drain Efficiency(%) | 55 |
| Vd（v） | 3.2 |
| Idq（嘛） | 50 |
| 包装类型 | QFN. |
| Package（毫米） | 5 x 5 |
| rohs. | Yes |
| Lead Free | Yes |
| 卤素免费 | Yes |
| ITAR受到限制 | 不 |
| ECCN. | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo和Modelithicshave partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model.Learn more。