甘65 V变换雷达市场:这是什么it Means for You
2020年3月20日
65伏GAN正在造成雷达系统中的新一代，旨在推进安全性并监控许多商业应用。65 V GaN也在帮助提升雷达市场增长2027。据Strategy Analytics，雷达市场将被设定为2022年超过10亿美元，预计65 V Gan将渗透到这一市场的主要部分。
在本博客文章中，我们研究了该技术如何转换雷达系统并为该不断增长的区域提供贡献。
Brief Background on Radar Applications
雷达设备主要用于安全for the defense sector across all nations. Primarily developed for defense and military purposes, these radar systems are extensively used in commercial sectors as well – such as air traffic, marine, meteorological monitoring and aircraft anti-collision systems.
军事应用中的雷达系统提高了安全性。不断增长的安全和安全应用以及国防预算的增加将推动对这些系统的需求。功率放大等技术进步也导致轻质雷达的发展，并有助于积极影响市场增长。此外，这些技术进步旨在减少系统规模，为商业和海事雷达设备开辟了各种新机遇。
RF技术在雷达中的作用
多年来，有几种用于雷达系统的RF放大技术，例如硅双极，硅LDMOS，砷化镓（GaAs）和管基产品，如行驶波管技术。最近，由于其卓越的技术特性，氮化镓（GaN）HEMT是RF和微波功率技术接管雷达应用市场。
GaN has quickly gained favor for many applications because of its high gain and high-power levels at L-band and above, and more recently in UHF. GaN HEMT transistors are most often produced on silicon carbide (SiC) substrates that offer excellent heat extraction for long-term reliability. GaN-on-SiC is ideally suited for high-power pulsed applications and its power density allows for optimal cooling. Due to this superior power density, the output capacitance per watt will be much lower. This enables harmonic tuning at the output with high efficiency, usually in the range of more than 70-80 percent in the kilowatt (kW) power levels.
Why High Voltage 65 V GaN?
Long-range radars are most widely used in the aerospace and defense sector. These radars are deployed to meet surveillance objectives, including weapon detection and target location. The most common military radar markets are the UHF radar, AESA radars, the aerospace identification friend or foe (IFF) and distance measuring equipment (DME). These markets require power amplification in the higher hundreds to thousands of watts. In these kW ranges, typical amplification is attained by combining multiple solid-state power transistors or using tube-based solutions.
However, Qorvo has created transistors in these high watt ranges by using higher operating voltage GaN. Qorvo’s 65 V operating voltage GaN not only attains the higher power kW amplification, but also maintains a better thermal solution for these radar applications. Additionally, it attains the IFF and DME application target parameters in a smaller form factor more reliably.
65 V Gan的好处
雷达设计工程师挑战当今雷达系统中的高度复杂性。今天的和下一代系统必须较小并以较低的运营成本运行。这三个关键的市场驱动因素正在推动雷达工程师朝着固态解决方案，如GaN。
65 V Gan-on-SiC实现了小型的上述目标，较低的运营成本和RF前端复杂性的降低。在晶体管级别的较高操作电压为设计人员产生灵活性，因为它可以使用单个晶体管实现高kW输出功率。它还通过组合较少的晶体管来实现雷达系统功率水平来降低设计复杂性。这些高压大功率晶体管高效，在UHF和L波段频率下测量为70-80％。
为了显示65 V Gan-on-SiC的真正优势，让我们在雷达应用中比较LDMOS和65 V Gan-on-SiC。使用LDMOS需要系统工程师创建复杂的功率相结合以获得多kW功率电平，而GAN-ON-SIC晶体管使用较少的设备简化组合的量来实现相同的功率电平。这节省了设计时间，同时降低了系统复杂性和成本。更高电压的另一个好处是较低的电流。对于相同量的输出功率，在65V下操作的GAN-on-SIC系统将具有较少的电源，从电源需要较小的电流，从而降低DC损耗并降低重量。此外，GaN-On-SIC具有比LDMO更高的效率。
从一开始，Gan-On-SiC提供比基于硅的LDMOS解决方案更高的电场强度。其较高的电子迁移率使得给定导通电阻和击穿电压的较小形状因子是比LDMOS的击穿电压。65 V Gan-On-SIC功能：
- 更高的功率密度 - 减少晶体管的数量和整体部件尺寸
- 较低的功耗 - 降低系统级电流损耗和电源需求
- 更容易匹配的能力 - 可以在保持可用输出阻抗的同时提高输出功率
由于几种原因，今天的雷达越来越多地使用GaN-On-SiC RF晶体管技术，包括更高的功率，高效率，鲁棒性，较低的功耗，尺寸减小，频率可用性，更高的频道温度及其延长的寿命。这些益处结合了雷达系统性能的总体上升。如下表所示，Qorvo Gan-On-SIC技术已经进化到创造了许多适合各种雷达应用的品种。最近，在与雷达客户合作时，Qorvo开发了一个特定的65 V Gan-On-SIC解决方案。该65 V GaN技术可以更有效地达到当今雷达应用的功率目标要求。
As shown in the table below, Qorvo has multiple GaN devices suitable for covering the UHF and L-Band radar market. With their high Power Added Efficiency (PAE), these transistors reduce system temperature, size and weight.
Gan-on-SiC 65 V晶体管
| 零件号 | 频率（MHz） | 瓦特 | 增益（DB） | PAE (%) | Package Style |
|---|---|---|---|---|---|
| QPD1013 | DC-2700. | 150 | 21.8 | 64.8 | DFN. |
| QPD1025 | 960-1215 | 1800 | 22.5 | 77.2 | 4铅Ni-1230（无耳） |
| QPD1025L. | 960-1215 | 1800 | 22.5 | 77.2 | 4铅Ni-1230（耳） |
| QPD1026L. | 420-450. | 13.00 | 25.9 | 80.8 | 4铅Ni-1230（耳） |
| QPD1029L. | 1200-1400 | 1500 | 21.3. | 75.0 | 4铅Ni-1230（耳） |
外带
雷达applications continue to grow exponentially serving many military and commercial markets. Qorvo’s GaN scientists have collaborated with radar customers in these advancing areas to create products optimized for their unique applications. 65 V GaN-on-SiC is one of the solutions developed in an effort to match the best technology with evolving application needs. Qorvo’s 65 V GaN solutions allow radar system engineers to design more competitive, lower cost radars with lower operating expenses over their lifetime. Not only has Qorvo 65 V GaN met the needs of our radar customers, it has also shown how customer collaboration can help catapult existing technology into new market areas to help RF design engineers create next-generation best-in-class radar solutions.
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