Hillsboro, Oregon (USA) – November 7, 2013–TriQuint Semiconductor, Inc.领先的射频解决方案供应商和技术创新者（NASDAQ:TQNT）今天宣布了五款新的第二代氮化镓（GaN）晶体管，以及模拟领导者Modelithics，Inc.的配套非线性射频模型。这些新器件和配套模型能够实现更快、更准确的性能测试，从而加快生产准备以及商用和国防射频应用的制造。
TriQuint's new GaN field effect transistors (FETs) with output power up to 90W offer enhanced efficiency (70% PAE or greater) and wideband frequency coverage (DC-18 GHz). Enhanced efficiency and greater power density can reduce the number of transistors in amplifier designs while improving overall performance through reduced combining loses.
TriQuint's new GaN FETs includeTGF2023-2-01型,转化生长因子2023-2-02,转化生长因子2023-2-05,转化生长因子2023-2-10和转化生长因子2023-2-20. The new non-linear modeling library was created by Modelithics, a leader in active and passive simulation models for Electronic Design Automation (EDA) utilizing RF and microwave components. The two companies will expand the TriQuint GaN library in coming months.
TriQuint的新车型可供选择download from Modelithics和are compatible with the industry's most popular design software including Agilent ADS and National Instruments/AWR applications. Advanced features include scaling of operating voltage, ambient temperature and self-heating effects, as well as intrinsic voltage/current node access for waveform optimization.
Contact a local118金宝搏app下载 或访问TriQuinton the web for more information about new GaN transistors. Learn about TriQuint赣创新including MMIC amplifiers, switches, die-level and packaged transistors; register for product updates and TriQuint's newsletter.
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Media Contact:Mark W. Andrews
战略营销传播经理
TriQuint Semiconductor, Inc.
Tel: +1.407.884.3404
E-mail:mark.andrews@triquint.com
Infrastructure & Defense Products:Richard Martin
晶体管产品经理
TriQuint Semiconductor, Inc.
Tel: +1.972.994.8222
E-mail:理查德·马丁@triquint.com网站